20v n-channel enhancement mode field effect transistor z features v ds 20v, v gs 8v, i d 2.5a, r ds(on) = 75m @v gs = 4.5v. r ds(on) = 90m @v gs = 2.5v. advanced trench process technology high-density cell design for ultra low on-resistance compact and low profile sot23 package z general description me2302 is produced with high cell density dmos trench technology, which is especially used to minimize on-state resistance. this device particularly suits low voltage applications such as portabl e equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. excellent thermal and electrical capabilities. z pin configurations see diagram below z package information sot23 unit:mm me2302
z absolute maximum ratings @ t a = 25c unless otherwise specified parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous 2.5 drain current pulsed i d 10 a power dissipation (1) p d 350 mw operating and storage juncti on temperature range t j , t stg -55 to +150 c z electrical characteristics @ t a = 25c unless otherwise specified parameter symbol test conditions min typ max unit off characteristics drain?source breakdown voltage v (br) dss v gs = 0 v, i d = 10ua 20 -- -- v zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v -- -- 1 ua gate?body leakage i gss v gs = 8 v, v ds = 0 v -- -- 100 na on characteristics (2) gate threshold voltage v gs(th) v ds = v gs , i d = 50ua 0.4 0.75 2.0 v v gs = 4.5 v, i d = 3.6 a -- 70 85 static drain?source on-resistance r ds(on) v gs = 2.5 v, i d = 3.1 a -- 90 115 m forward transconductance g fs v ds = 5 v, i d = 3.6 a 2 7.7 14 s dynamic characteristics input capacitance c iss -- 450 -- output capacitance c oss -- 70 -- reverse transfer capacitance c rss v ds = 10 v, v gs = 0 v, f = 1.0 mhz -- 43 -- pf switching characteristics turn?on delay time t d(on) -- -- 15 turn?on rise time t r -- -- 80 turn?off delay tim t d(off) -- -- 60 turn?off fall time t f v dd = 5 v, i d = 3.6a, v gs =4.5 v,r gen =6 -- -- 25 ns drain-source diode characteristics and maximum ratings diode forward voltage (2) v sd v gs = 0 v, i s = 1.1 a 0.6 0.8 1.15 v notes : (1). surface mounted on fr4 board, t < 10 sec. (2). pulse test: pulse width < 300s, duty cycle < 2%
z typical performance characteristics 012345 0 2 4 6 8 10 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 v gs =2.5,3.0,3.5,4.0,4.5v v gs =2.0v v gs =1.5v v gs =1.0v i d , drain current (a) v ds , drain-source voltage (v) figure 1. output characteristics 25 o c,v ds =1.5v i d , drain current (a) v gs , gate-to-source voltage (v) figure 2. transfer characteristics -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i d =50ua,v ds =vgs vth, gate threshold voltage (v) tj, junction temperature ( o c) figure 5. gate threshold vs.temperature 0.40.60.81.01.2 0.1 1 10 i s , source drain current (a) v sd , body diode forward voltage (v) figure 6. body diode forward voltage vs. source current -50 0 50 100 150 0 10 20 30 40 50 60 70 i d =3.6a,v gs =4.5v r ds(on) , on-resistance (mohm) tj, junction temperature ( o c) figure 4. on-resistance vs. temperature 0246810 0 100 200 300 400 500 600 700 coss ciss crss f=1.0mhz c t , capacitance (pf) v ds , drain source voltage figure 3. capacitance
figure 7. gate charge figure 8. maximum safe operating area
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